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| MOS Memory GENERAL CATALOG 1. Selection Guide Dynamic RAMs Synchronous DRAMs 183 MHz TC59S6432 CFT/CFTL-54 64 Mbits 2M x 32 * 166 MHz TC59S6432 CFT/CFTL-60 183 MHz * * 143 MHz TC59S6432 CFT/CFTL-70 166 MHz * 125 MHz TC59S6432 CFT/CFTL-80 143 MHz * :LVTTL 200 MHz TC59S6432 DFT/DFTL-50 125 MHz TC59S6432 DFT/DFTL-80 TC59S6432 DFT/DFTL-54 TC59S6432 DFT/DFTL-60 TC59S6432 DFT/DFTL-70 :LVTTL 143 MHz 32M x 4 Synchronous DRAM 133 MHz TC59SM704AFT/AFTL-75 125 MHz TC59SM704AFT/AFTL-80 TC59SM704AFT/AFTL-70 :LVTTL 128 Mbits 16M x 8 TC59SM708AFT/AFTL-70 TC59SM708AFT/AFTL-75 TC59SM708AFT/AFTL-80 :LVTTL 8M x 16 TC59SM716AFT/AFTL-70 TC59SM716AFT/AFTL-75 TC59SM716AFT/AFTL-80 :LVTTL TC59SM804BFT/BFTL-70 64M x 4 * TC59SM804BFT/BFTL-75 * TC59SM804BFT/BFTL-80 * :LVTTL TC59SM804CFT/CFTL-70 TC59SM804CFT/CFTL-75 TC59SM804CFT/CFTL-80 :LVTTL TC59SM808BFT/BFTL-70 256 Mbits 32M x 8 * TC59SM808BFT/BFTL-75 * TC59SM808BFT/BFTL-80 * :LVTTL TC59SM808CFT/CFTL-70 TC59SM808CFT/CFTL-75 TC59SM808CFT/CFTL-80 :LVTTL TC59SM816BFT/BFTL-70 16M x 16 * TC59SM816BFT/BFTL-75 * TC59SM816BFT/BFTL-80 * :LVTTL TC59SM816CFT/CFTL-70 TC59SM816CFT/CFTL-75 TC59SM816CFT/CFTL-80 :LVTTL *: New product 4 DDR Synchronous DRAMs 143 MHz (286 Mbps) * 64M x 4 DDR Synchronous DRAM * 133 MHz (266 Mbps) * 125 MHz (250 Mbps) TC59WM803BFT-80 * : SSTL-2 TC59WM803BFT-70 * TC59WM803BFT-75 * 256 Mbits 32M x 8 TC59WM807BFT-70 * TC59WM807BFT-75 * TC59WM807BFT-80 * : SSTL-2 16M x 16 TC59WM815BFT-70 TC59WM815BFT-75 TC59WM815BFT-80 : SSTL-2 *: New product Fast Cycle RAM (FCRAM) (DDR) 154 MHz (308 Mbps) 32M x 8 Fast Cycle DRAM 256 Mbits (DDR) 16M x 16 143 MHz (286 Mbps) TC59LM806BFT-24 125 MHz (250 Mbps) TC59LM806BFT-30 : SSTL-2 VW TC59LM806BFT-22 TC59LM814BFT-22 TC59LM814BFT-24 TC59LM814BFT-30 : SSTL-2 :SSTL-2 VW Rambus DRAMs (RDRAM) 800 MHz 144 Mbits Rambus DRAM 8M x 18 711MHz TC59RM718MB/RB-7 600 MHz TC59RM718MB/RB-6 TC59RM718MB/RB-8 128 Mbits 8M x 16 TC59RM716MB/RB-8 * TC59RM716MB/RB-7 * TC59RM716MB/RB-6 * 288 Mbits 16M x 18 TC59RM818MB-8 * TC59RM818MB-7 * TC59RM818MB-6 * 256 Mbits 16M x 16 TC59RM816MB-8 TC59RM816MB-7 TC59RM816MB-6 *: New product 5 Selection Guide DRAM Modules 8-Byte Unbuffered DIMMs (SDRAM) for 133-MHz bus and 100-MHz bus 7 ns 8M x 64 64 Mbytes 8M x 72 7.5 ns THMY64N11A75 8 ns THMY64N11A80 THMY64N11A70 THMY64E11A70 THMY64E11A75 THMY64E11A80 16M x 64 128 Mbytes 16M x 72 THMY12N11A70 THMY12N11A75 THMY12N11A80 THMY12E11A70 THMY12E11A75 THMY12E11A80 32M x 64 256 Mbytes 32M x 72 THMY25N01A70 THMY25N01A75 THMY25N01A80 THMY25E01A70 THMY25E01A75 THMY25E01A80 7 ns THMY12N11B70 7.5 ns THMY12N11B75 8 ns THMY12N11B80 THMY12N11C70 16M x 64 THMY12N11C75 THMY12N11C80 THMY12N31B70 THMY12N31B75 THMY12N31B80 128 Mbytes THMY12N31C70 THMY12N31C75 THMY12N31C80 THMY12E11B70 16M x 72 THMY12E11B75 THMY12E11B80 THMY12E11C70 THMY12E11C75 THMY12E11C80 THMY25N11B70 32M x 64 THMY25N11B75 THMY25N11B80 THMY25N11C70 256 Mbytes THMY25N11C75 THMY25N11C80 THMY25E11B70 32M x 72 THMY25E11B75 THMY25E11B80 THMY25E11C70 THMY25E11C75 THMY25E11C80 THMY51N01B70 64M x 64 THMY51N01B75 THMY51N01B80 THMY51N01C70 512 Mbytes THMY51N01C75 THMY51N01C80 THMY51E01B70 64M x 72 THMY51E01B75 THMY51E01B80 THMY51E01C70 THMY51E01C75 THMY51E01C80 6 8-Byte Registered DIMMs (SDRAM) for 133-MHz bus and 100-MHz bus 7 ns 128 Mbytes 16M x 72 7.5 ns THMY12E10A75 8 ns THMY12E10A80 THMY12E10A70 256 Mbytes 32M x 72 THMY25E10A70 THMY25E10A75 THMY25E10A80 THMY51E0SA70 512 Mbytes 64M x 72 THMY51E0SA75 THMY51E0SA80 THMY51E2SA70 THMY51E2SA75 THMY51E2SA80 7 ns THMY25E10B70 256 Mbytes 32M x 72 7.5 ns THMY25E10B75 8 ns THMY25E10B80 THMY25E10C70 THMY25E10C75 THMY25E10C80 THMY51E10B70 512 Mbytes 64M x 72 THMY51E10B75 THMY51E10B80 THMY51E10C70 THMY51E10C75 THMY51E10C80 THMY1GE0SB70 THMY1GE0SB75 THMY1GE0SB80 THMY1GE0SC70 1 Gbytes 128M x 72 THMY1GE0SC75 THMY1GE0SC80 THMY1GE2SB70 THMY1GE2SB75 THMY1GE2SB80 THMY1GE2SC70 THMY1GE2SC75 THMY1GE2SC80 7 Selection Guide 8-Byte Unbuffered DIMMs (DDR SDRAM) for 266-MHz bus and 200-MHz bus 7 ns * 128 Mbytes 16M x 64 * 7.5 ns * 8 ns THMD12N11B80 * THMD12N11B70 * THMD12N11B75 * 32M x 64 256 Mbytes 32M x 72 THMD25N11B70 * THMD25N11B75 * THMD25N11B80 * THMD25E11B70 * THMD25E11B75 * THMD25E11B80 * 64M x 64 512 Mbytes 64M x 72 THMD51N01B70 * THMD51N01B75 * THMD51N01B80 * THMD51E01B70 THMD51E01B75 THMD51E01B80 *: New product 8-Byte Registered DIMMs (DDR SDRAM) for 266-MHz bus and 200-MHz bus 7 ns * 256 Mbytes 32M x 72 * 7.5 ns * 8 ns THMD25E30B80 * THMD25E30B70 * THMD25E30B75 * THMD51E20B70 512 Mbytes 64M x 72 * THMD51E20B75 * THMD51E20B80 * THMD51E30B70 * 1 Gbytes 128M x 72 THMD51E30B75 * THMD51E30B80 * THMD1GE0SB70 THMD1GE0SB75 THMD1GE0SB80 *: New product 8-Byte Unbuffered SO-DIMMs (DDR SDRAM) for 266-MHz bus and 200-MHz bus 7 ns * 128 Mbytes 16M x 64 * 7.5 ns * 8 ns THLD12N11B80 * THLD12N11B70 * THLD12N11B75 * THLD25N01B70 256 Mbytes 32M x 64 * THLD25N01B75 * THLD25N01B80 * THLD25N11B70 THLD25N11B75 THLD25N11B80 *: New product 8 8-Byte Unbuffered SO-DIMMs (SDRAM) for 133-MHz bus and 100-MHz bus 7 ns THLY64N11A70 64 Mbytes 8M x 64 7.5 ns THLY64N11A75 8 ns THLY64N11A80 THLY64N11A70L THLY64N11A75L THLY64N11A80L THLY12N01A70 128 Mbytes 16M x 64 THLY12N01A75 THLY12N01A80 THLY12N01A70L THLY12N01A75L THLY12N01A80L THLY25N61A70 256 Mbytes 32M x 64 THLY25N61A75 THLY25N61A80 THLY25N61A70L THLY25N61A75L THLY25N61A80L 7 ns THLY12N11B70 7.5 ns THLY12N11B75 8 ns THLY12N11B80 128 Mbytes 16M x 64 THLY12N11B70L THLY12N11B75L THLY12N11B80L THLY12N11C70 THLY12N11C75 THLY12N11C80 THLY12N11C70L THLY12N11C75L THLY12N11C80L THLY25N01B70 THLY25N01B75 THLY25N01B80 256 Mbytes 32M x 64 THLY25N01B70L THLY25N01B75L THLY25N01B80L THLY25N01C70 THLY25N01C75 THLY25N01C80 THLY25N01C70L ** THLY25N01C75L ** THLY25N01C80L ** THLY51N61C70 512 Mbytes 64M x 64 ** THLY51N61C75 ** THLY51N61C80 ** THLY51N61C70L THLY51N61C75L THLY51N61C80L : Component STSOP PKG **: Under development (Component CSP PKG) 9 Selection Guide RIMM TM (RDRAM) 800 MHz 8M x 16 x 4 711MHz THMR1N4E-7 600 MHz THMR1N4E-6 THMR1N4E-8 8M x 18 x 4 64 Mbytes 16M x 16 x 2 THMR1E4E-8 * THMR1E4E-7 * THMR1E4E-6 * THMR2N2Z-8 THMR2N2Z-7 THMR2N2Z-6 16M x 18 x 2 THMR2E2Z-8 THMR2E2Z-7 THMR2E2Z-6 8M x 16 x 8 THMR1N8E-8 THMR1N8E-7 THMR1N8E-6 8M x 18 x 8 128 Mbytes 16M x 16 x 4 THMR1E8E-8 * THMR1E8E-7 * THMR1E8E-6 * THMR2N4Z-8 THMR2N4Z-7 THMR2N4Z-6 16M x 18 x 4 THMR2E4Z-8 THMR2E4Z-7 THMR2E4Z-6 8M x 16 x 16 THMR1N16E-8 THMR1N16E-7 THMR1N16E-6 8M x 18 x 16 256 Mbytes 16M x 16 x 8 THMR1E16E-8 * THMR1E16E-7 * THMR1E16E-6 * THMR2N8Z-8 THMR2N8Z-7 THMR2N8Z-6 16M x 18 x 8 THMR2E8Z-8 * THMR2E8Z-7 * THMR2E8Z-6 * 16M x 16 x 16 512 Mbytes 16M x 18 x 16 THMR2N16-8 THMR2N16-7 THMR2N16-6 THMR2E16-8 THMR2E16-7 THMR2E16-6 *: New product Notes: RIMM is the registered trademark of the Rambus company in the United States. 10 Static RAMs Low-Power Static RAMs (E/R type) 70 ns 85 ns 100 ns TC554001AF/AFT-70 TC554001AF/AFT-70L 512k x 8 TC554001AF/AFT-85 TC554001AF/AFT-85L TC554001AFI/AFTI-85 TC554001AFI/AFTI-85L TC554001AF/AFT-85V TC554161AFT-85 TC554001AF/AFT-10 TC554001AF/AFT-10L TC554001AFI/AFTI-10 TC554001AFI/AFTI-10L TC554001AF/AFT-10V TC554161AFT-10 TC554001AFI/AFTI-70 TC554001AFI/AFTI-70L TC554001AF/AFT-70V TC554161AFT-70 CMOS 4 Mbits TC554161AFT-70L 256k x 16 TC554161AFT-85L TC554161AFT-10L TC554161AFTI-70 TC554161AFTI-85 TC554161AFTI-10 TC554161AFTI-70L TC554161AFTI-85L TC554161AFTI-10L TC554161AFT-70V TC554161AFT-85V TC554161AFT-10V 11 Selection Guide Low-Power Static RAMs (Full-CMOS type) 55 ns 70 ns TC55V4000ST-70 512k x 8 85 ns TC55V4000ST-85 TC55V040AFT-55 4 Mbits TC55V040AFT-70 TC55V400AFT-55 ** 256k x 16 TC55V400AFT-70 ** TC55W400XB5 TC55W400XB7 ** ** TC55Y400XB7 TC55Y400XB8 CMOS 8 Mbits 512k x 16/1M x 8 TC55W800FT-55 TC55W800FT-70 * * TC55W800XB7 512k x 16 ** TC55W800XB8 ** TC55Y800XB7 * 1M x 16/2M x 8 16 Mbits 1M x 16 * TC55Y800XB8 TC55W1600FT-55 TC55W1600FT-70 * * TC55W1600XB7 TC55W1600XB8 *: New product **: Under development Pseudo Static RAMs 80 ns * TC51W3216XB 32 Mbits 2M x 16 * TC51W3217XB CMOS ** TC51W6416XB 64 Mbits 4M x 16 ** TC51W6417XB *: New product **: Under development 12 High-Speed Static RAMs (Asynchronous) 8/10 ns 12 ns TC55V8512J/FT-12 512k x 8 15 ns TC55V8512J/FT-15 TC55V8512JI/FTI-12 4 Mbits TC55V8512JI/FTI-15 (I version) TC55V16256J/FT-12 256k x 16 TC55V16256J/FT-15 TC55V16256JI/FTI-12 CMOS 16M x 1 TC55V16256JI/FTI-15 (I version) TC55V11601FT-15 4M x 4 16 Mbits TC55V4400FT-10 TC55V4400FT-12 TC55V4400FT-15 TC55V8200FT-10 2M x 8 TC55V8200FT-12 TC55V8200FT-15 TC55V8200FTI-12 TC55V8200FTI-15 (I version) TC55V16100FT-10 1M x 16 TC55V16100FT-12 TC55V16100FT-15 TC55V16100FTI-12 TC55V16100FTI-15 (I version) 13 Selection Guide High-Speed Static RAMs (Synchronous) 167 MHz TC55V4326FF-167 150 MHz TC55V4326FF-150 133 MHz TC55V4326FF-133 (pipelined burst, 2E1D) TC55V4326FFI-150 ** ** TC55V4326FFI-133 ** (pipelined burst, 2E1D, I version) TC55V4326AFF-167 TC55V4326AFF-150 ** TC55V4326AFF-133 ** TC55V4326AFFI-150 4 Mbits 128k x 32 TC55V4326AFFI-133 100 MHz TC55V4336FF-100 83 MHz TC55V4336FF-83 (flow through) TC55V4336FFI-83 ** (flow through, I version) TC55V4336AFF-83 ** TC55V4336AFFI-83 CMOS 167 MHz TC55V4366FF-167 150 MHz TC55V4366FF-150 133 MHz TC55V4366FF-133 (pipelined burst, 2E1D) TC55V4366FFI-150 ** ** TC55V4366FFI-133 ** (pipelined burst, 2E1D, I version) TC55V4366AFF-167 TC55V4366AFF-150 ** TC55V4366AFF-133 ** TC55V4366AFFI-150 4.5 Mbits 128k x 36 TC55V4366AFFI-133 100 MHz TC55V4376FF-100 83 MHz TC55V4376FF-83 (flow through) TC55V4376FFI-83 ** (flow through, I version) TC55V4376AFF-83 ** TC55V4376AFFI-83 **: Under development 14 High-Speed Static RAMs (Synchronous) continued 167 MHz 150 MHz TC55VD818FF-150 143 MHz TC55VD818FF-143 133 MHz TC55VD818FF-133 (NtRAM: pipelined type, 3.3 V) TC55VD818FFI-143 TC55VD818FFI-133 (NtRAM: pipelined type, I version, 3.3 V) TC55WD818FF-167 512k x 18 TC55WD818FF-150 83 MHz TC55VL818FF-83 TC55WD818FF-133 (NtRAM: pipelined type, 2.5 V) (NtRAM: flow through type, 3.3 V) (NtRAM: flow through type, I version, 3.3 V) TC55VL818FFI-83 167 MHz 150 MHz TC55VD836FF-150 143 MHz TC55VD836FF-143 133 MHz TC55VD836FF-133 (NtRAM: pipelined type, 3.3 V) TC55VD836FFI-143 CMOS 9 Mbits 256k x 36 TC55VD836FFI-133 (NtRAM: pipelined type, I version, 3.3 V) TC55WD836FF-167 TC55WD836FF-150 83 MHz TC55VL836FF-83 TC55WD836FF-133 (NtRAM: pipelined type, 2.5 V) (NtRAM: flow through type, 3.3 V) (NtRAM: flow through type, I version, 3.3 V) TC55VL836FFI-83 167 MHz 256k x 36 150 MHz TC55WK837XB-300 (DDR SRAM) TC55WK837XB-333 15 Selection Guide High-Speed Static RAMs (Synchronous) continued 167 MHz TC55VD1618FF-167 1M x 18 150 MHz TC55VD1618FF-150 133 MHz TC55VD1618FF-133 (NtRAM: pipelined type, 3.3 V) TC55WD1618FF-167 167 MHz TC55VD1636FF-167 512k x 36 TC55WD1618FF-150 150 MHz TC55VD1636FF-150 TC55WD1618FF-133 133 MHz TC55VD1636FF-133 (NtRAM: pipelined type, 2.5 V) (NtRAM: flow through type, 3.3 V) TC55WD1636FF-167 167 MHz 1M x 18 TC55WD1636FF-150 150 MHz TC55V16186FF-150 150 MHz TC55V16366FF-150 333 MHz ** TC55WD1636FF-133 133 MHz TC55V16186FF-133 133 MHz TC55V16366FF-133 250 MHz ** (NtRAM: flow through type, 2.5 V) TC55V16186FF-167 167 MHz (pipelined burst, 2E1D, 3.3 V) 512k x 36 TC55V16366FF-167 400 MHz ** (pipelined burst, 2E1D, 3.3 V) CMOS 18 Mbits 1M x 18 TC55YK1618AYB-800 400 MHz ** TC55YK1618AYB-666 333 MHz ** TC55YK1618AYB-500 250 MHz ** (DDR SRAM) 512k x 36 TC55YK1636AYB-800 TC55YK1636AYB-666 333 MHz ** TC55YK1636AYB-500 250 MHz ** (DDR SRAM) 1M x 18 TC55YD1819YB-333 333 MHz ** TC55YD1819YB-250 250 MHz ** (Sigma SDR: 1 x 1Dp) 512k x 36 TC55YD1837YB-333 333 MHz ** TC55YD1837YB-250 250 MHz ** (Sigma SDR: 1 x 1Dp) 256k x 72 TC55YD1873YB-333 TC55YD1873YB-250 (Sigma SDR: 1 x 1Dp) **: Under development 16 NOR Flash Memories/NAND E2PROMs/SmartMediaTM NOR Flash Memories 70 ns 80/85 ns TC58FVT160FT-85 16 Mbits 2M x 8/ 1M x 16 100 ns TC58FVT160FT-10 120 ns TC58FVT160FT-12 TC58FVB160FT-85 * TC58FVB160FT-10 * TC58FVB160FT-12 TC58FVT160AFT/XB-70 * TC58FVT160AFT/XB-10 * TC58FVB160AFT/XB-70 NOR Flash TC58FVB160AFT/XB-10 TC58FVT321FT/*XB-70 32 Mbits 4M x 8/ 2M x 16 TC58FVT321FT/*XB-10 TC58FVB321FT/*XB-70 TC58FVB321FT/*XB-10 TC58FVT641FT/*XB-70 64 Mbits 8M x 8/ 4M x 16 TC58FVT641FT/*XB-10 TC58FVB641FT/*XB-70 TC58FVB641FT/*XB-10 *: New product 17 Selection Guide NAND E2PROM 50 ns TC58V64AFT 64 Mbits (8M + 256k) x8 ** TC58V64BFT TC58128FT 128 Mbits (16M + 512k) x8 * TC58128AFT NAND 2 E PROM 256 Mbits (32M + 1M) x8 TC58256FT TC58256AFT (64M + 2M) x8 (128M + 4M) x8 512 Mbits TC58512FT 1 Gbits TH58100FT : 1st Access Time 25 s Max *: New product **: Under development TM SmartMedia 50 ns TC58V64ADC 8 MBytes (8M + 256k) x 8 bits ** 80 ns TC58V64BDC TC58NS128DC 16 MBytes (16M + 512k) x 8 bits * TC58NS128ADC SmartMedia TM TC58NS256DC 32 MBytes (32M + 1M) x 8 bits TC58NS256ADC (64M + 2M) x 8 bits (128M + 4M) x 8 bits 64 MBytes TC58NS512DC 128 MBytes TH58NS100DC : 1st Access Time 25 s Max *: New product **: Under development 18 MCPs (multichip packages) MCPs (NOR Flash Memory/SRAM) Flash SRAM TH50VSF2580AASB Flash Top Boot Block TH50VSF2582AASB 4 MBits 512k x 8/ 256k x 16 TH50VSF2581AASB Flash Bottom Boot Block TH50VSF2583AASB 32 MBits 4M x 8/ 2M x 16 TH50VSF3580AASB Flash Top Boot Block TH50VSF3582AASB 8 MBits 1M x 8/ 512k x 16 TH50VSF3581AASB Flash Bottom Boot Block TH50VSF3583AASB TH50VSF2680AASB MCP Flash Top Boot Block TH50VSF2682AASB 4 MBits 512k x 8/ 256k x 16 TH50VSF2681AASB Flash Bottom Boot Block TH50VSF2683AASB TH50VSF3680AASB Flash Top Boot Block TH50VSF3682AASB 64 MBits 8M x 8/ 4M x 16 8 MBits 1M x 8/ 512k x 16 TH50VSF3681AASB Flash Bottom Boot Block TH50VSF3683AASB TH50VSF4680AASB Flash Top Boot Block TH50VSF4682AASB 16 MBits 2M x 8/ 1M x 16 TH50VSF4681AASB Flash Bottom Boot Block TH50VSF4683AASB 19 2. Characteristics Dynamic RAMs Synchronous DRAMs Capacity Product No. Organization (bits) Max Clock Access Time (ns) 5.4 2,097,152 x 32 (4 Banks) 5.4 5.4 6 4.4 (note) 2,097,152 x 32 (4 Banks) 4.4 (note) 4.4 (note) 4.4 (note) 5 (note) 33,554,432 x 4 (4 Banks) 16,777,216 x 8 (4 Banks) 8,388,608 x 16 (4 Banks) 67,108,864 x 4 (4 Banks) 33,554,432 x 8 (4 Banks) 16,777,216 x 16 (4 Banks) 67,108,864 x 4 (4 Banks) 33,554,432 x 8 (4 Banks) 16,777,216 x 16 (4 Banks) 5.4 5.4 6 5.4 5.4 6 5.4 5.4 6 5.4 5.4 6 5.4 5.4 6 5.4 5.4 6 5.4 5.4 6 5.4 5.4 6 5.4 5.4 6 Min Clock Cycle Time (ns) 5.4 6 7 8 5 5.4 6 7 8 7 7.5 8 7 7.5 8 7 7.5 8 7 7.5 8 7 7.5 8 7 7.5 8 7 7.5 8 7 7.5 8 7 7.5 8 Power Supply (V) Power Dissipation (mW) Active 576 Standby 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 7.2 7.2 7.2 7.2 7.2 7.2 7.2 7.2 7.2 10.8 10.8 10.8 10.8 10.8 10.8 10.8 10.8 10.8 10.8 10.8 10.8 10.8 10.8 10.8 10.8 10.8 10.8 No. of Pins Package Width (inches) 64 Mbits * * * * * 128 Mbits 256 Mbits * * * * * * * * * TC59S6432CFT/CFTL-54 TC59S6432CFT/CFTL-60 TC59S6432CFT/CFTL-70 TC59S6432CFT/CFTL-80 TC59S6432DFT/DFTL-50 TC59S6432DFT/DFTL-54 TC59S6432DFT/DFTL-60 TC59S6432DFT/DFTL-70 TC59S6432DFT/DFTL-80 TC59SM704AFT/AFTL-70 TC59SM704AFT/AFTL-75 TC59SM704AFT/AFTL-80 TC59SM708AFT/AFTL-70 TC59SM708AFT/AFTL-75 TC59SM708AFT/AFTL-80 TC59SM716AFT/AFTL-70 TC59SM716AFT/AFTL-75 TC59SM716AFT/AFTL-80 TC59SM804BFT/BFTL-70 TC59SM804BFT/BFTL-75 TC59SM804BFT/BFTL-80 TC59SM808BFT/BFTL-70 TC59SM808BFT/BFTL-75 TC59SM808BFT/BFTL-80 TC59SM816BFT/BFTL-70 TC59SM816BFT/BFTL-75 TC59SM816BFT/BFTL-80 TC59SM804CFT/CFTL-70 TC59SM804CFT/CFTL-75 TC59SM804CFT/CFTL-80 TC59SM808CFT/CFTL-70 TC59SM808CFT/CFTL-75 TC59SM808CFT/CFTL-80 TC59SM816CFT/CFTL-70 TC59SM816CFT/CFTL-75 TC59SM816CFT/CFTL-80 3.3 0.3 (LVTTL) 558 522 450 648 468 432 396 360 360 342 324 360 342 324 360 342 324 360 342 324 360 342 324 360 342 324 360 342 324 360 342 324 360 342 324 86 (86) TSOP (II): 0.4 (0.5 mm pitch) 3.3 0.3 (LVTTL) 86 (86) TSOP (II): 0.4 (0.5 mm pitch) 3.3 0.3 (LVTTL) 3.3 0.3 (LVTTL) 3.3 0.3 (LVTTL) 3.3 0.3 (LVTTL) 3.3 0.3 (LVTTL) 3.3 0.3 (LVTTL) 3.3 0.3 (LVTTL) 3.3 0.3 (LVTTL) 3.3 0.3 (LVTTL) 54 (54) TSOP (II): 0.4 (0.8 mm pitch) TSOP (II): 0.4 (0.8 mm pitch) TSOP (II): 0.4 (0.8 mm pitch) TSOP (II): 0.4 (0.8 mm pitch) TSOP (II): 0.4 (0.8 mm pitch) TSOP (II): 0.4 (0.8 mm pitch) TSOP (II): 0.4 (0.8 mm pitch) TSOP (II): 0.4 (0.8 mm pitch) TSOP (II): 0.4 (0.8 mm pitch) 54 (54) 54 (54) 54 (54) 54 (54) 54 (54) 54 (54) 54 (54) 54 (54) Notes: Load = 30pF *: New product 20 DDR-Synchronous DRAMs Capacity Product No. Organization (bits) 67,108,864 x 4 (4 Banks) 33,554,432 x 8 (4 Banks) 16,777,216 x 16 (4 Banks) Max Clock Access Time (ns) 0.75 0.75 0.8 0.75 0.75 0.8 0.75 0.75 0.8 Min Clock Cycle Time (ns) 7 7.5 8 7 7.5 8 7 7.5 8 Power Supply (V) Power Dissipation (mW) Active 446 419 405 446 419 405 446 419 405 Standby 8.1 8.1 8.1 8.1 8.1 8.1 8.1 8.1 8.1 No. of Pins Package Width (inches) 256 Mbits TC59WM803BFT-70 TC59WM803BFT-75 TC59WM803BFT-80 TC59WM807BFT-70 TC59WM807BFT-75 TC59WM807BFT-80 TC59WM815BFT-70 TC59WM815BFT-75 TC59WM815BFT-80 2.5 0.2 (SSTL-2) 66 (66) TSOP (II): 0.4 (0.65 mm pitch) Fast Cycle RAM (FCRAM) (DDR) Capacity Product No. Organization (bits) 33,554,432 x 8 (4 Banks) 16,777,216 x 16 (4 Banks) Max Clock Access Time (ns) 0.85 0.9 1 0.85 0.9 1 Min Clock Cycle Time (ns) 6.5 7 8 6.5 7 8 Power Supply (V) Power Dissipation (mW) Active 459 446 Standby 8.1 8.1 8.1 8.1 8.1 8.1 No. of Pins Package Width (inches) 256 Mbits TC59LM806BFT-22 TC59LM806BFT-24 TC59LM806BFT-30 TC59LM814BFT-22 TC59LM814BFT-24 TC59LM814BFT-30 2.5 0.2 (SSTL-2) 405 459 446 405 66 (66) TSOP (II): 0.4 (0.65 mm pitch) (VW Function) Notes: FCRAM and Fast Cycle RAM are registered trademarks of Fujitsu Limited, Japan. Rambus DRAMs (RDRAM) Capacity Product No. Organization (bits) Min Clock Cycle Time (ns) 2.50 8,388,608 x 18 2.80 3.33 2.50 8,388,608 x 16 2.80 3.33 2.50 16,777,216 x 18 2.80 3.33 2.50 16,777,216 x 16 2.80 3.33 *: New product 2.5 5% 1512 266 92 BGA 2.5 5% 1670 266 92 BGA 2.5 5% 1512 266 62 BGA 2.5 5% 1670 266 62 BGA Power Supply (V) Power Dissipation (mW) Active Standby No. of Pins Package Width (inches) 144 Mbits 128 Mbits * * * * 256 Mbits * * 288 Mbits Notes: TC59RM718MB/RB-8 TC59RM718MB/RB-7 TC59RM718MB/RB-6 TC59RM716MB/RB-8 TC59RM716MB/RB-7 TC59RM716MB/RB-6 TC59RM818MB-8 TC59RM818MB-7 TC59RM818MB-6 TC59RM816MB-8 TC59RM816MB-7 TC59RM816MB-6 RDRAM is a registered trademark of Rambus Inc. 21 Characteristics DRAM Modules 8-Byte DIMMs (SDRAM) Unbuffered Capacity 64 Mbytes 128 Mbytes 256 Mbytes Product No. Organization (bits) 8M x 64 8M x 72 16M x 64 16M x 72 32M x 64 32M x 72 Cycle Time tCK (ns) No. of Pins Height 25.40 Dimensions (mm) Length Width Comment 128 Mbytes 256 Mbytes 512 Mbytes THMY64N11A70,75,80 THMY64E11A70,75,80 THMY12N11A70,75,80 THMY12E11A70,75,80 THMY25N01A70,75,80 THMY25E01A70,75,80 THMY12N11B70,75,80 THMY12N11C70,75,80 THMY12N31B70,75,80 THMY12N31C70,75,80 THMY12E11B70,75,80 THMY12E11C70,75,80 THMY25N11B70,75,80 THMY25N11C70,75,80 THMY25E11B70,75,80 THMY25E11C70,75,80 THMY51N01B70,75,80 THMY51N01C70,75,80 THMY51E01B70,75,80 THMY51E01C70,75,80 70:7.0 75:7.5 80:8.0 2.80 168 35.052 4.00 133.35 70, 75 : PC133 Rev 0.4 80 : PC100 Rev 1.0 16M x 64 25.40 16M x 72 32M x 64 32M x 72 35.052 64M x 64 4.00 64M x 72 70:7.0 75:7.5 80:8.0 168 133.35 THMYxxxxBxx : 0.175 um THMYxxxxCxx : 0.175 Dum 2.80 70, 75 : PC133 Rev 0.4 80 : PC100 Rev 1.0 8-Byte DIMMs (SDRAM) Registered Capacity 128 Mbytes 256 Mbytes 512 Mbytes 256 Mbytes 512 Mbytes Product No. Organization (bits) 16M x 72 32M x 72 64M x 72 32M x 72 64M x 72 Cycle Time tCK (ns) 70:7.0 75:7.5 80:8.0 No. of Pins Height 38.10 Dimensions (mm) Length Width 4.00 Comment 1 Gbytes THMY12E10A70,75,80 THMY25E10A70,75,80 THMY51E0SA70,75,80 THMY51E2SA70,75,80 THMY25E10B70,75,80 THMY25E10C70,75,80 THMY51E10B70,75,80 THMY51E10C70,75,80 THMY1GE0SB70,75,80 THMY1GE0SC70,75,80 THMY1GE2SB70,75,80 THMY1GE2SC70,75,80 168 43.18 133.35 6.35 70, 75 : PC133 Rev 1.0 80 : PC100 Rev 1.2 38.10 4.00 70:7.0 75:7.5 80:8.0 168 43.18 6.35 133.35 THMYxxxxBxx : 0.175 um THMYxxxxCxx : 0.175 Dum 70, 75 : PC133 Rev 1.0 80 : PC100 Rev 1.2 128M x 72 Note: L, S: Stack type 8-Byte DIMMs (DDR SDRAM) Unbuffered Capacity Product No. Organization (bits) 16M x 64 32M x 64 32M x 72 64M x 64 64M x 72 *: New product 70:7.0 75:7.5 80:8.0 184 31.75 133.35 Cycle Time tCK (ns) No. of Pins Height Dimensions (mm) Length Width 3.18 Comment * * 256 Mbytes * * 512 Mbytes * 128 Mbytes THMD12N11B70,75,80 THMD25N11B70,75,80 THMD25E11B70,75,80 THMD51N01B70,75,80 THMD51E01B70,75,80 4.00 70 : PC2100 (CL = 2) 75 : PC2100 (CL = 2.5) 80 : PC1600 (CL = 2) 22 8-Byte DIMMs (DDR SDRAM) Registered Capacity Product No. Organization (bits) 32M x 72 64M x 72 128M x 72 Cycle Time tCK (ns) 70:7.0 75:7.5 80:8.0 No. of Pins Height Dimensions (mm) Length Width 3.99 6.81 Comment 70 : PC2100 (CL = 2) 75 : PC2100 (CL = 2.5) 80 : PC1600 (CL = 2) *: New product * * 512 Mbytes * * 1 Gbyte 256 Mbytes Note: S: Stack type THMD25E30B70,75,80 THMD51E20B70,75,80 THMD51E30B70,75,80 THMD1GE0SB70,75,80 184 43.18 133.35 8-Byte SO-DIMMs (DDR SDRAM) Unbuffered Capacity Product No. Organization (bits) 16M x 64 32M x 64 Cycle Time tCK (ns) 70:7.0 75:7.5 80:8.0 No. of Pins Height 31.75 Dimensions (mm) Length 67.60 Width 3.80 Comment 70 : PC2100 (CL = 2) 75 : PC2100 (CL = 2.5) 80 : PC1600 (CL = 2) *: New product * * 256 Mbytes * 128 Mbytes THLD12N11B70,75,80 THLD25N01B70,75,80 THLD25N11B70,75,80 200 8-Byte SO-DIMMs (SDRAM) Unbuffered Capacity 64 Mbytes 128 Mbytes Product No. Organization (bits) 8M x 64 16M x 64 32M x 64 Cycle Time tCK (ns) No. of Pins Height 25.40 Dimensions (mm) Length Width Comment 256 Mbytes 128 Mbytes 256 Mbytes 512 Mbytes ** ** THLY64N11A70,75,80 THLY64N11A70L,75L,80L THLY12N01A70,75,80 THLY12N01A70L,75L,80L THLY25N61A70,75,80 THLY25N61A70L,75L,80L THLY12N11B70,75,80 THLY12N11B70L,75L,80L THLY12N11C70,75,80 THLY12N11C70L,75L,80L THLY25N01B70,75,80 THLY25N01B70L,75L,80L THLY25N01C70,75,80 THLY25N01C70L,75L,80L THLY51N61C70,75,80 THLY51N61C70L,75L,80L 70:7.0 75:7.5 80:8.0 144 31.75 67.60 3.80 70, 75 : PC133 Rev 1.0 80 : PC100 Rev 1.0 L : Low Power Version 16M x 64 70:7.0 75:7.5 80:8.0 25.40 70, 75 : PC133 Rev 1.0 80 : PC100 Rev 1.0 L : Low Power Version THLYxxxxBxx : 0.175 um THLYxxxxCxx : 0.175 Dum 144 31.75 67.60 3.80 32M x 64 64M x 64 : Component STSOP PKG **: Under development (Component CSP PKG) RIMMTM (RDRAM) Capacity 64 Mbytes 128 Mbytes 256 Mbytes 64 Mbytes 128 Mbytes 256 Mbytes 512 Mbytes Note: Product No. Organization Operating Frequency (bits) (MHz) 8M x 16 x 4 8M x 18 x 4 8M x 16 x 8 8M x 18 x 8 8M x 16 x 16 8M x 18 x 16 16M x 16 x 2 16M x 18 x 2 16M x 16 x 4 16M x 18 x 4 16M x 16 x 8 16M x 18 x 8 16M x 16 x 16 16M x 18 x 16 -8:800 -7:711 -6:600 -8:800 -7:711 -6:600 No. of Pins Height Dimensions (mm) Length Width Comment Used 128 Mbits RDRAM * * * * THMR1N4E-8,-7,-6 THMR1E4E-8,-7,-6 THMR1N8E-8,-7,-6 THMR1E8E-8,-7,-6 THMR1N16E-8,-7,-6 THMR1E16E-8,-7,-6 THMR2N2Z-8,-7,-6 THMR2E2Z-8,-7,-6 THMR2N4Z-8,-7,-6 THMR2E4Z-8,-7,-6 THMR2N8Z-8,-7,-6 THMR2E8Z-8,-7,-6 THMR2N16-8,-7,-6 THMR2E16-8,-7,-6 4.8 184 31.75 133.35 8.0 Used 144 Mbits RDRAM Used 128 Mbits RDRAM Used 144 Mbits RDRAM Used 128 Mbits RDRAM Used 144 Mbits RDRAM Used 256 Mbits RDRAM Used 288 Mbits RDRAM Used 256 Mbits RDRAM Used 288 Mbits RDRAM Used 256 Mbits RDRAM Used 288 Mbits RDRAM Used 256 Mbits RDRAM Used 288 Mbits RDRAM *: New product 4.8 184 34.29 133.35 8.0 RIMM is a trademark of Rambus Inc. 23 Characteristics Static RAMs Low-Power Static RAMs Capacity Product No. Organization (bits) Max Access Time (ns) 70 85 100 70 85 100 70 85 100 524,288 x 8 70 85 100 120 (70) 150 (85) 150 (100) 55 [70] 70 [85] 70 [85] 85 [100] 70 85 100 70 85 100 70 85 100 70 262,144 x 16 85 100 150 (70) 150 (85) 150 (100) 55 [70] 70 [85] 55 [70] 70 [85] 70 [85] 85 [100] 524,288 x16/ 1,048,576x8 55 [70] 70 [85] 70 [85] 524,288 x16 85 [100] 70 [85] 85 [100] 1,048,576 x16/ 2,097,152x8 1,048,576 x16 55 [70] 70 [85] 70 [85] 85 [100] Min Cycle Time (ns) 70 85 100 70 85 100 70 85 100 70 85 100 120 (70) 150 (85) 150 (100) 55 [70] 70 [85] 70 [85] 85 [100] 70 85 100 70 85 100 70 85 100 70 85 100 150 (70) 150 (85) 150 (100) 55 [70] 70 [85] 55 [70] 70 [85] 70 [85] 85 [100] 55 [70] 70 [85] 70 [85] 85 [100] 70 [85] 85 [100] 55 [70] 70 [85] 70 [85] 85 [100] Power Supply (V) Max Power Dissipation (mW) Active Standby No. of Pins Package Width(inch) 4 Mbits TC554001AF/AFT-70 TC554001AF/AFT-85 TC554001AF/AFT-10 TC554001AF/AFT-70L TC554001AF/AFT-85L TC554001AF/AFT-10L TC554001AFI/AFTI-70 TC554001AFI/AFTI-85 TC554001AFI/AFTI-10 TC554001AFI/AFTI-70L TC554001AFI/AFTI-85L TC554001AFI/AFTI-10L TC554001AF/AFT-70V TC554001AF/AFT-85V TC554001AF/AFT-10V TC55V040AFT-55 TC55V040AFT-70 TC55V4000ST-70 TC55V4000ST-85 TC554161AFT-70 TC554161AFT-85 TC554161AFT-10 TC554161AFT-70L TC554161AFT-85L TC554161AFT-10L TC554161AFTI-70 TC554161AFTI-85 TC554161AFTI-10 TC554161AFTI-70L TC554161AFTI-85L TC554161AFTI-10L TC554161AFT-70V TC554161AFT-85V TC554161AFT-10V TC55V400AFT-55 TC55V400AFT-70 TC55W400XB5 TC55W400XB7 TC55Y400XB7 TC55Y400XB8 TC55W800FT-55 TC55W800FT-70 TC55W800XB7 TC55W800XB8 TC55Y800XB7 TC55Y800XB8 TC55W1600FT-55 TC55W1600FT-70 TC55W1600XB7 TC55W1600XB8 0.55 0.275 5.0 10% 330 1.1 32 SOP 0.525 (F) TSOP-II 0.4 (FT) 0.55 2.75.5 (5.0 V 10%) 99 (3.0 V 10%) 330 (5.0 V 10%) 181.5 (3.0 V 10%) 0.0924 (3.0 V 10%) 0.275 (5.0 V 10%) 40 32 TSOP-I 10 x 14 mm TSOP-I 8 x 13.4 mm 2.73.6 [2.33.6] 148.5 (3.0 V 10%)) 0.0198 (3.0 V 10%) 0.0252 (3.3 V 0.3 V) 162 550 495 550 495 0.275 0.55 5.0 10% 550 495 550 495 99 (3.0 V 10%) 550 (5.0 V 10%) 99 (3.0 V 10%) 495 (5.0 V 10%) 214.5 (3.0 V 10%) 0.55 1.1 54 TSOP-II 0.4 2.75.5 (5.0 10%) 2.73.6 [2.33.6] 2.53.3 [2.33.3] 1.82.2 [1.652.2] 2.73.3 [2.33.3] 1.82.2 [1.652.2] 2.73.1 [2.33.1] 0.0924 (3.0 V 10%) 0.275 (5.0 V 10%) TSOP-I 12 x 14 mm FBGA 6.5 x 8 mm TSOP-I 12 x 20 mm FBGA 8 x 11 mm TSOP-I 12 x 20 mm FBGA 10 x 12 mm *: New product **: Under development 0.0198 (3.0 V 10%) 181.5 (3.0 V 10%) 0.0252 (3.3 V 0.3 V) 148.5 55 181.5 148.5 0.033 (2.3 V3.3 V) 0.015 (2.3 V3.0 V) 48 0.033 (2.3 V3.3 V) 0.015 (2.3 V3.0 V) 0.011 ** ** ** ** * * ** ** * * 16 Mbits * * 8 Mbits 55 170.5 139.5 0.011 0.031 (2.3 V3.1 V) 0.015 (2.3 V3.0 V) 24 Pseudo Static RAMs Capacity Product No. Organization (bits) 2,097,152 x 16 80 4,194,304 x 16 100 2.53.1 124 0.31 Max Access Time (ns) Min Cycle Time (ns) Power Supply (V) Max Power Dissipation (mW) Active Standby 0.217 48 No. of Pins Package Width(inch) * * ** 64 MBits ** 32 MBits TC51W3216XB TC51W3217XB TC51W6416XB TC51W6417XB FBGA 9 x 6 mm *: New product **: Under development High-Speed Static RAMs (Asynchronous) Capacity Product No. Organization (bits) Max Access Time (ns) 12 15 12 524,288 x 8 15 12 15 12 15 12 262,144 x 16 15 12 15 16,777,216 x 1 4,194,304 x 4 15 10 12 15 10 12 2,097,152 x 8 15 12 15 10 12 1,048,576 x 16 15 12 15 Min Cycle Time (ns) 12 15 12 15 12 15 12 15 12 15 12 15 15 10 12 15 10 12 15 12 15 10 12 15 12 15 Power Supply (V) Max Power Dissipation (mW) Active 612 504 648 540 612 504 Standby 14.4 No. of Pins Package Width (inches) 4 MBit 16 MBits TC55V8512J-12 TC55V8512J-15 TC55V8512JI-12 TC55V8512JI-15 TC55V8512FT-12 TC55V8512FT-15 TC55V8512FTI-12 TC55V8512FTI-15 TC55V16256J/FT-12 TC55V16256J/FT-15 TC55V16256JI/FTI-12 TC55V16256JI/FTI-15 TC55V11601FT-15 TC55V4400FT-10 TC55V4400FT-12 TC55V4400FT-15 TC55V8200FT-10 TC55V8200FT-12 TC55V8200FT-15 TC55V8200FTI-12 TC55V8200FTI-15 TC55V16100FT-10 TC55V16100FT-12 TC55V16100FT-15 TC55V16100FTI-12 TC55V16100FTI-15 36 36.0 14.4 44 36.0 14.4 44 36.0 14.4 13.86 14.4 13.68 SOJ 0.4 3.3 0.3 648 540 792 684 828 720 612 TSOP-II 11.8 x 18.8 mm SOJ 0.4(J/JI)/ TSOP-II 11.8 x 18.8 mm (FT/FTI) 3.3 5% 3.3 0.3 3.3 5% 1421 1368 1296 1490 1440 1332 1440 1332 1560 1512 1368 1512 1368 3.3 0.3 14.4 54 TSOP-II 11.8 x 22.6 mm 3.3 5% 13.68 3.3 0.3 14.4 Notes: J = SOJ; FT = TSOP 25 Characteristics High-Speed Static RAMs (Synchronous) Capacity Product No. Organization (bits) Max Access Time (ns) 3.5 3.8 4 4.4 5 8.5 9 131,072 x 32 9 3.5 3.8 4 4.4 5 9 9 3.5 3.8 4 4.4 5 8.5 9 131,072 x 36 9 3.5 3.8 4 4.4 5 9 9 3.6 1,048,576 x 18 3.8 4.2 3.6 524,288 x 36 3.8 4.2 Min Cycle Time (ns) 6 (167 MHz) 6.6 (150 MHz) 7.5 (133 MHz) 6.6 (150 MHz) 7.5 (133 MHz) 10 (100 MHz) 12 (83 MHz) 12 (83 MHz) 6 (167 MHz) 6.6 (150 MHz) 7.5 (133 MHz) 6.6 (150 MHz) 7.5 (133 MHz) 12 (83 MHz) 12 (83 MHz) 6 (167 MHz) 6.6 (150 MHz) 7.5 (133 MHz) 6.6 (150 MHz) 7.5 (133 MHz) 10 (100 MHz) 12 (83 MHz) 12 (83 MHz) 6 (167 MHz) 6.6 (150 MHz) 7.5 (133 MHz) 6.6 (150 MHz) 7.5 (133 MHz) 12 (83 MHz) 12 (83 MHz) 6 (167 MHz) 6.6 (150 MHz) 7.5 (133 MHz) 6 (167 MHz) 6.6 (150 MHz) 7.5 (133 MHz) Power Supply (V) Max Power Dissipation (mW) Active 1332 1278 1188 1314 1224 1080 1044 1080 1332 1278 1188 1314 1224 1044 1080 1332 1278 1188 1314 1224 1080 1044 1080 1332 1278 1188 1314 1224 1044 1080 1455.3 1403.3 1316.7 1524.6 1472.6 1386 100 Standby No. of Pins Package Width (inches) 4 MBits ** ** ** ** ** ** ** 4.5 Mbits ** ** ** ** ** ** ** 18 Mbits TC55V4326FF-167 TC55V4326FF-150 TC55V4326FF-133 TC55V4326FFI-150 TC55V4326FFI-133 TC55V4336FF-100 TC55V4336FF-83 TC55V4336FFI-83 TC55V4326AFF-167 TC55V4326AFF-150 TC55V4326AFF-133 TC55V4326AFFI-150 TC55V4326AFFI-133 TC55V4336AFF-83 TC55V4336AFFI-83 TC55V4366FF-167 TC55V4366FF-150 TC55V4366FF-133 TC55V4366FFI-150 TC55V4366FFI-133 TC55V4376FF-100 TC55V4376FF-83 TC55V4376FFI-83 TC55V4366AFF-167 TC55V4366AFF-150 TC55V4366AFF-133 TC55V4366AFFI-150 TC55V4366AFFI-133 TC55V4376AFF-83 TC55V4376AFFI-83 TC55V16186FF-167 TC55V16186FF-150 TC55V16186FF-133 TC55V16366FF-167 TC55V16366FF-150 TC55V16366FF-133 3.13.6 10.8 LQFP 16.0 x 22.0 mm 3.3 5% 34.65 Notes: FF: LQFP TC55V4326FF, TC55V4366FF, TC55V16186FF, TC55V16366FF: synchronous SRAM (pipelined-burst SRAM, 2 cycle enable 1 cycle disable) TC55V4336FF, TC55V4376FF synchronous SRAM (flow-through SRAM) **: Under development 26 High-Speed Static RAMs (NtRAMTM) Capacity Product No. Organization (bits) Max Access Time (ns) 3.8 4 4.2 524,288 x 18 9 4 4.2 9 3.8 4 4.2 262,144 x 36 9 4 4.2 9 3.5 524,288 x 18 3.8 4.2 3.5 262,144 x 36 3.8 4.2 3.6 1,048,576 x 18 3.8 4.2 3.6 524,288 x 36 3.8 4.2 3.6 1,048,576 x 18 3.8 4.2 3.6 524,288 x 36 3.8 4.2 Min Cycle Time (ns) 6.6 (150 MHz) 7 (143 MHz) 7.5 (133 MHz) 12 (83 MHz) 7 (143 MHz) 7.5 (133 MHz) 12 (83 MHz) 6.6 (150 MHz) 7 (143 MHz) 7.5 (133 MHz) 12 (83 MHz) 7 (143 MHz) 7.5 (133 MHz) 12 (83 MHz) 6 (167 MHz) 6.6 (150 MHz) 7.5 (133 MHz) 6 (167 MHz) 6.6 (150 MHz) 7.5 (133 MHz) 6 (167 MHz) 6.6 (150 MHz) 7.5 (133 MHz) 6 (167 MHz 6.6 (150 MHz) 7.5 (133 MHz) 6 (167 MHz) 6.6 (150 MHz) 7.5 (133 MHz) 6.0 (167 MHz) 6.6 (150 MHz) 7.5 (133 MHz) Power Supply (V) Max Power Dissipation (mW) Active 1455.3 1386 1316.7 831.6 1386 1316.7 831.6 1524.6 1455.3 1386 900.9 1455.3 1386 900.9 918.75 866.25 813.75 945 892.5 840 1420.65 1351.3 1282 1524.6 1455.3 1386 1076.25 1023.75 971.25 1155 1102.5 1050 100 26.25 Standby No. of Pins Package Width (inches) 9 MBits 18 Mbits TC55VD818FF-150 TC55VD818FF-143 TC55VD818FF-133 TC55VL818FF-83 TC55VD818FFI-143 TC55VD818FFI-133 TC55VL818FFI-83 TC55VD836FF-150 TC55VD836FF-143 TC55VD836FF-133 TC55VL836FF-83 TC55VD836FFI-143 TC55VD836FFI-133 TC55VL836FFI-83 TC55WD818FF-167 TC55WD818FF-150 TC55WD818FF-133 TC55WD836FF-167 TC55WD836FF-150 TC55WD836FF-133 TC55VD1618FF-167 TC55VD1618FF-150 TC55VD1618FF-133 TC55VD1636FF-167 TC55VD1636FF-150 TC55VD1636FF-133 TC55WD1618FF-167 TC55WD1618FF-150 TC55WD1618FF-133 TC55WD1636FF-167 TC55WD1636FF-150 TC55WD1636FF-133 3.3 5% 34.65 2.5 5% LQFP 16.0 x 22.0 mm 3.3 5% 34.65 2.5 5% 26.25 Notes: FF: LQFP TC55VD818FF, TC55VD836FF, TC55WD818FF, TC55WD836FF, TC55VD1618FF, TC55VD1636FF, TC55WD1618FF, TC55WD1636FF: Nt RAM(no-turnaround RAM, pipelined type) TC55VL818FF, TC55VL836FF: Nt RAM(no-turnaround RAM, flow-through type) NtRAM is a trademark of Samsung Electronics Co., Ltd. High-Speed Static RAMs (Sigma SDR : 1 x 1DP) Capacity Product No. Organization (bits) 1,048,576 x 18 524,288 x 36 262,144 x 72 Max Access Time (ns) 2.1 1.6 2.1 1.6 2.1 1.6 Min Cycle Time (ns) 4 (250 MHz) 3 (333 MHz) 4 (250 MHz) 3 (333 MHz) 4 (250 MHz) 3 (333 MHz) Power Supply (V) Max Power Dissipation (mW) Active Standby No. of Pins Package Width (inches) ** ** ** 18 MBits ** ** ** TC55YD1819YB-250 TC55YD1819YB-333 TC55YD1837YB-250 TC55YD1837YB-333 TC55YD1873YB-250 TC55YD1873YB-333 1.7~1.95 TBD TBD 209 BGA 14.0 x 22.0 mm **: Under development 27 Characteristics High-Speed Static RAMs (DDR) Capacity Product No. Organization (bits) 262,144 x 36 Max Access Time (ns) 4.0 4.5 1.8 1.9 2.3 1.8 Min Cycle Time (ns) 6.0 (167 MHz) 6.6 (150 MHz) 2.5 (400 MHz) 3 (333 MHz) 4 (250 MHz) 2.5 (400 MHz) 3 (333 MHz) 4 (250 MHz) Power Supply (V) 2.5 5%(VDD) 1.41.6(VDDQ) 1.8 5%(VDD) 1.8 5% or 1.41.6(VDDQ) 1.8 5%(VDD) 1.8 5% or 1.41.6(VDDQ) Max Power Dissipation (mW) Active 1444 Standby 210 No. of Pins Package Width (inches) BGA 14.0 x 22.0 mm BGA 14.0 x 22.0 mm BGA 14.0 x 22.0 mm 9 MBits ** ** ** 18 MBits ** ** ** Notes: TC55WK837XB-333 TC55WK837XB-300 TC55YK1636AYB-800 TC55YK1636AYB-666 TC55YK1636AYB-500 TC55YK1618AYB-800 TC55YK1618AYB-666 TC55YK1618AYB-500 153 524,288 x 36 TBD TBD 153 1,048,576 x 18 1.9 2.3 TBD TBD 153 XB: BGA TC55WK837XB: DDR SRAM (double data rate SRAM) **: Under development 28 NOR Flash Memories/NAND E2PROMs/SmartMediaTM NOR Flash Memories Capacity Product No. Organization (bits) Max Access Time (ns) 100/120 85 Power Supply (V) 2.73.6 3.3 0.3 Max Power Dissipation (mW) Read 108 108 Write/Erase 144 144 Standby 0.018 0.018 Operating Write/Erase Temperature Method O ( C) Package (inches) No. of Pins 16 Mbits * * * * 32 Mbits * * 64 Mbits * * TC58FVT160FT-10,12 TC58FVB160FT-10,12 TC58FVT160FT-85 TC58FVB160FT-85 TC58FVT160AFT-70/10 TC58FVB160AFT-70/10 TC58FVT160AXB-70/10 TC58FVB160AXB-70/10 TC58FVT321FT-70/10 TC58FVB321FT-70/10 TC58FVT321XB-70/10 TC58FVB321XB-70/10 TC58FVT641FT-70/10 TC58FVB641FT-70/10 TC58FVT641XB-70/10 TC58FVB641XB-70/10 12 x 20 TSOP TYPE I 12 x 20 TSOP TYPE I Command Control Method FBGA48-0608 -4085 12 x 20 TSOP TYPE I FBGA56-0710 12 x 20 TSOP TYPE I FBGA63-0911 *: New Product 48 1,048,576 x 16/ 2,097,152 x 8 48 48 48 56 48 63 70/100 2.73.6 72 54 0.036 2,097,152 x 16/ 4,194,304 x 8 70/100 2.73.6 72 54 0.036 4,194,304 x 16/ 8,388,608 x 8 70/100 2.73.6 72 54 0.036 NAND E2PROMs Capacity Product No. Organization (bits) 8,650,752 x 8 17,301,504 x 8 34,603,008 x 8 69,206,016 x 8 138,412,032 x 8 Max Access Time Serial cycle (ns) 1st access (s) 50 50 50 50 50 50 50 50 25 25 25 25 25 25 25 25 Power Supply (V) 3.3 0.3 2.73.6 3.3 0.3 2.73.6 3.3 0.3 2.73.6 2.73.6 2.73.6 Max Power Dissipation (mW) Read 108 108 108 108 108 108 108 108 Write/Erase 108 108 108 108 108 108 108 108 Standby 0.36 0.36 0.36 0.36 0.36 0.36 0.36 0.36 Operating Temperature O ( C) Package 400 mil TSOP TYPE II No. of Pins 64 Mbits 128 Mbits 256 Mbits 512 Mbits 1 Gbits ** * TC58V64AFT TC58V64BFT TC58128FT TC58128AFT TC58256FT TC58256AFT TC58512FT TH58100FT 44 (40) 070 12 x 20 TSOP TYPE I 48 *: New Product **: Under Development SmartMediaTM Capacity Product No. Organization (bits) 8,650,752 x 8 17,301,504 x 8 34,603,008 x 8 69,206,016 x 8 138,412,032 x 8 Max Access Time Serial cycle (ns) 1st access (s) 50 50 50 50 50 50 50 80 25 25 25 25 25 25 25 25 Power Supply (V) 3.3 0.3 3.3 0.3 3.3 0.3 3.3 0.3 3.3 0.3 3.3 0.3 3.3 0.3 3.3 0.3 Max Power Dissipation (mW) Read 108 108 108 108 108 108 108 108 Write/Erase 108 108 108 108 108 108 108 108 Standby 0.36 0.36 0.36 0.36 0.36 0.36 0.36 0.36 Operating Temperature O ( C) Package No. of Pins 8 MBytes 16 MBytes 32 MBytes 64 MBytes 128 MBytes Note: ** * TC58V64ADC TC58V64BDC TC58NS128DC TC58NS128ADC TC58NS256DC TC58NS256ADC TC58NS512DC TH58NS100DC FDC22A FDC22A 055 FDC22A FDC22A FDC22C *: New Product **: Under Development 22 Package = FDC22A, FDC22C: Floppy Disk Card SmartMedia is a trademark of Toshiba Corporation. 29 Characteristics MCPs (multi-chip packages) MCPs (NOR Flash Memory / SRAM) Capacity Flash/ SRAM Organization (bits) Product No. Flash memory SRAM Max Power Access Time Supply (V) (ns) 90 2.73.6 70 90 70 2.73.3 90 72 70 90 2.73.6 70 90 2.73.1 70 *: New product 148.5 0.033 162 0.025 54 0.036 56 148.5 0.033 162 0.025 SRAM Power Dissipation (mW) Active Standby Flash Power Dissipation Package (mW) No. of Pins Width Write/Erase Standby Active method 32M/4M * * 32M/8M * * * * * * 64M/4M * * * * 64M/16M * * 64M/8M TH50VSF2580AASB TH50VSF2581AASB TH50VSF2582AASB TH50VSF2583AASB TH50VSF3580AASB TH50VSF3581AASB TH50VSF3582AASB TH50VSF3583AASB TH50VSF3680AASB TH50VSF3681AASB TH50VSF3682AASB TH50VSF3683AASB TH50VSF2680ASSB TH50VSF2681AASB TH50VSF2682AASB TH50VSF2683AASB TH50VSF4680AASB TH50VSF4681AASB TH50VSF4682AASB TH50VSF4683AASB 524,288 x 8/ 262,144 x 16 4,194,304 x 8/ 2,097,152 x 16 1,048,576 x 8/ 524,288 x 16 9 x 12 P-BGA 8,388,608 x 8/ 4,194,304 x 16 524,288 x 8/ 262,144 x 16 2,097,152 x 8/ 1,048,576 x 16 10 x 12 P-BGA 30 OVERSEAS SUBSIDIARIES AND AFFILIATES Toshiba America Electronic Components, Inc. Headquarters-Irvine, CA 9775 Toledo Way, Irvine, CA 92618, U.S.A. Tel: (949)455-2000 Fax: (949)859-3963 011025 (A) Toshiba Electronics Europe GmbH Dusseldorf Head Office Hansaallee 181, D-40549 Dusseldorf, Germany Tel: (0211)5296-0 Fax: (0211)5296-400 Toshiba Electronics Asia, Ltd. Hong Kong Head Office Level 11, Tower 2, Grand Century Place, No.193, Prince Edward Road West, Mong Kok, Kowloon, Hong Kong Tel: 2375-6111 Fax: 2375-0969 Boulder, CO (Denver) 3100 Araphahoe Avenue, Ste. 500, Boulder, CO 80303, U.S.A. Tel: (303)442-3801 Fax: (303)442-7216 Munchen Office Buro Munchen Hofmannstrasse 52, D-81379, Munchen, Germany Tel: (089)748595-0 Fax: (089)748595-42 Beijing Office Rm 714, Beijing Fortune Building, No.5 Dong San Huan Bei-Lu, Chao Yang District, Beijing, 100004, China Tel: (010)6590-8796 Fax: (010)6590-8791 Boynton Beach, FL (Orlando) 11924 W. Forest Hill Blvd., Ste. 22-337, Wellington, FL 33414, U.S.A. Tel: (561)733-4949 Fax: (561)733-4949 Toshiba Electronics France S.A.R.L. Immeuble Robert Schuman 3 Rue de Rome F-93561, Rosny-Sous-Bois, Cedex, France Tel: (1)48-12-48-12 Fax: (1)48-94-51-15 Chengdu Office Suite 403A, Holiday Inn Crown Plaza 31, Zongfu Street, Chengdu, 610016, China Tel: (028)675-1773 Fax: (028)675-1065 Deerfield, IL (Chicago) One Pkwy., North, Suite 500, Deerfield, IL 60015, U.S.A. Tel: (847)945-1500 Fax: (847)945-1044 Toshiba Electronics Italiana S.R.L. Centro Direzionale Colleoni, Palazzo Perseo 3, 1-20041 Agrate Brianza, (Milan), Italy Tel: (039)68701 Fax:(039)6870205 Shenzhen Office Rm 3010-3013, Office Tower Shun Hing Square, Di Wang Commercial Centre, 5002 ShenNan East Road, Shenzhen, 518008, China Tel: (0755)246-3218 Fax: (0755)246-1581 Duluth, GA (Atlanta) 3700 Crestwood Parkway, Ste. 460, Duluth, GA 30196, U.S.A. Tel: (770)931-3363 Fax: (770)931-7602 Toshiba Electronics Espana, S.A. Parque Empresarial, San Fernando, Edificio Europa, 1a Planta, E-28831 Madrid, Spain Tel: (91)660-6798 Fax:(91)660-6799 Edison, NJ 2035 Lincoln Hwy. #3000, Edison, NJ 08817, U.S.A. Tel: (732)248-8070 Fax: (732)248-8030 Toshiba Electronics Korea Corporation Seoul Head Office 14/F, KEC B/D, 275-7 Yangjae-dong, Seocho-ku, Seoul, Korea Tel: (02)589-4300 Fax: (02)589-4302 Toshiba Electronics (UK) Ltd. Riverside Way, Camberley Surrey, GU15 3YA, U.K. Tel: (01276)69-4600 Fax: (01276)69-4800 Orange County, CA 2 Venture Plaza, #500 Irvine, CA 92618, U.S.A. Tel: (949)453-0224 Fax: (949)453-0125 Toshiba Electronics Scandinavia A.B. Gustavslundsvagen 12, 2nd Floor, S-161 15 Bromma, Sweden Tel: (08)704-0900 Fax: (08)80-8459 Gumi Office 6/F, Good morning Securities B/D, 56 Songjung-dong, Gumi-shi, Kyeongbuk, Korea Tel: (0546)456-7613 Fax: (0546)456-7617 Portland, OR 1700 NW 167th Place, #240, Beaverton, OR 97006, U.S.A. Tel: (503)629-0818 Fax: (503)629-0827 Toshiba Electronics Asia (Singapore) Pte. Ltd. Singapore Head Office 438B Alexandra Road, #06-08/12 Alexandra Technopark, Singapore 119968 Tel: (278)5252 Fax: (271)5155 Raleigh, NC 5511 Capitol Center Dr., #114, Raleigh, NC 27606, U.S.A. Tel: (919)859-2800 Fax: (919)859-2898 Toshiba Technology Development (Shanghai) Co., Ltd. 23F, HSBC Tower, 101 Yin Cheng East Road, Pudong New Area, Shanghai, 200120, China Tel: (021)6841-0666 Fax: (021)6841-5002 Bangkok Office 135 Moo 5, Bangkadi Industrial Park, Tivanon Rd., Bangkadi, Amphur Muang, Pathumthai, Bangkok 12000, Thailand Tel: (02)501-1635 Fax: (02)501-1638 Richardson, TX (Dallas) 777 East Campbell Rd., #650, Richardson, TX 75081, U.S.A. Tel: (972)480-0470 Fax: (972)235-4114 Tsurong Xiamen Xiangyu Trading Co., Ltd. 8N, Xiamen SEZ Bonded Goods Market Building, Xiamen, Fujian, 361006, China Tel: (0592)562-3798 Fax: (0592)562-3799 San Jose Engineering Center, CA 1060 Rincon Circle, San Jose, CA 95131, U.S.A. Tel: (408)526-2400 Fax:(408)526-2410 Toshiba Electronics Trading (Malaysia)Sdn. Bhd. Kuala Lumpur Head Office Suite W1203, Wisma Consplant, No.2, Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: (03)731-6311 Fax: (03)731-6307 Wakefield, MA (Boston) 401 Edgewater Place, #360, Wakefield, MA 01880, U.S.A. Tel: (781)224-0074 Fax: (781)224-1095 Toshiba Electronics Taiwan Corporation Taipei Head Office 17F, Union Enterprise Plaza Bldg. 109 Min Sheng East Rd., Section 3, 10446 Taipei, Taiwan Tel: (02)2514-9988 Fax: (02)2514-7892 Toshiba Do Brasil, S.A. Electronic Component Div. Estrada Dos Alvarengas 5500, 09850-550, Brasil Sao Bernardo do campo, S.P. Tel: (011)4358-7144 Fax: (011)4358-7179 Penang Office Suite 13-1, 13th Floor, Menara Penang Garden, 42-A, Jalan Sultan Ahmad Shah, 100 50 Penang, Malaysia Tel: (04)226-8523 Fax: (04)226-8515 Kaohsiung Office 16F-A, Chung-Cheng Bldg.2, Chung-Cheng 3Rd., Kaohsiung, 80027, Taiwan Tel: (07)222-0826 Fax: (07)223-0046 Toshiba Electronics Philippines, Inc. 26th Floor, Citibank Tower, Valero Street, Makati, Manila, Philippines Tel: (02)750-5510 Fax: (02)750-5511 (As of August, 2001) The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed in this document shall be made at the customeris own risk. The products described in this document are subject to the foreign exchange and foreign trade laws. Electronic Devices Sales & Marketing Division 1-1, Shibaura 1-chome, Minato-ku, Tokyo, 105-8001, Japan Tel: +81-3-3457-3405 Fax: +81-3-5444-9431 Website: http://www.semicon.toshiba.co.jp/eng/index.html 0000C-0000 PC DQ (c)2001 TOSHIBA CORPORATION Printed in Japan |
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